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MJE18008G

Manufacturer:

On Semiconductor

Mfr.Part #:

MJE18008G

Datasheet:
Description:

BJTs TO-220-3 Through Hole NPN 125 W Collector Base Voltage (VCBO):1 kV Collector Emitter Voltage (VCEO):450 V Emitter Base Voltage (VEBO):9 V

ParameterValue
Voltage Rating (DC)450 V
Length10.28 mm
Width4.82 mm
Max Operating Temperature150 °C
Min Operating Temperature-65 °C
Number of Pins3
Height15.75 mm
PackagingTube
Radiation HardeningNo
RoHSCompliant
PolarityNPN
REACH SVHCNo SVHC
Contact PlatingTin
Frequency13 MHz
Number of Elements1
Current Rating8 A
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation125 W
Power Dissipation125 W
Max Collector Current8 A
Collector Emitter Breakdown Voltage450 V
Transition Frequency13 MHz
Element ConfigurationSingle
Max Frequency13 MHz
Collector Emitter Voltage (VCEO)450 V
Gain Bandwidth Product13 MHz
Collector Base Voltage (VCBO)1 kV
Collector Emitter Saturation Voltage300 mV
Emitter Base Voltage (VEBO)9 V
hFE Min14
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Max Cutoff Collector Current8 A
Transistor TypeNPN

Stock: 488

Distributors
pcbx
Unit Price$1.70217
Ext.Price$1.70217
QtyUnit PriceExt.Price
1$1.70217$1.70217
10$0.93273$9.32730